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Description

Overview:
This course will focus for a large part on MOSFET and CMOS, but also on heterojunction BJT, and photonic devices.First non-ideal characteristics of MOSFETs will be discussed, like channel-length modulation and short-channel effects. We will also pay attention to threshold voltage modification by varying the dopant concentration. Further, MOS scaling will be discussed. A combination of an n-channel and p-channel MOSFET is used for CMOS devices that form the basis for current digital technology. The operation of a CMOS inverter will be explained. We will explain in more detail how the transfer characteristics relate to the CMOS design.
Subject:
Electronic Technology, Physics
Level:
College / Upper Division, Graduate / Professional
Material Type:
Activity/Lab, Lecture Notes
Author:
Provider:
Delft University of Technology
Provider Set:
TU Delft OpenCourseWare
Date Added:
02/20/2016
License:
Creative Commons Attribution Non-Commercial Share Alike Creative Commons Attribution Non-Commercial Share Alike
Language:
English
Media Format:
Downloadable docs, Text/HTML

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